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| APM4906K Dual N-Channel Enhancement Mode MOSFET Features * 30V/7A, RDS(ON) =22m (typ.) @ VGS = 10V RDS(ON) =26m (typ.) @ VGS = 4.5V Pin Description * * * * Super High Dense Cell Design Reliable and Rugged SOP-8 Package Lead Free Available (RoHS Compliant) D1 (1) (2) S1/D2 (5) (6) (7) Top View of SOP - 8 Applications G1 (8) * Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems S2 (4) G2 (3) N-Channel MOSFET Ordering and Marking Information APM4906 Lead Free Code Handling Code Temp. Range Package Code Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150 C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM4906 K : APM4906 XXXXX Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate www..com termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright (c) ANPEC Electronics Corp. Rev. B.1 - Apr., 2006 1 www.anpec.com.tw APM4906K Absolute Maximum Ratings Symbol VDSS VGSS ID * IDM* IS * TJ T STG PD* RJA* Note: *Surface Mounted on 1in pad area, t 10sec. 2 (TA = 25C unless otherwise noted) Rating 30 16 7 VGS=10V Channel1 30 2 A Channel2 3 150 -55 to 150 T A=25C T A=100C 2 0.8 62.5 W C/W C V A Unit Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient Electrical Characteristics Symbol Parameter (TA = 25C unless otherwise noted) APM4906K Min. Typ. Max. Test Condition Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS =0V, IDS =250A VDS =24V, VGS =0V T J=85C VDS =24V, VGS =0V T J=85C Ch1 30 1 30 50 5 1 1.5 22 26 Ch1 Ch2 0.75 2 100 28 34 1.1 0.52 V A A mA V nA m IDSS Zero Gate Voltage Drain Current Ch2 VGS(th) IGSS R DS(ON) a a Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VDS =VGS, IDS =250A VGS =16V, V DS=0V VGS =10V, IDS=7A VGS =4.5V, I DS=5A ISD=1A, VGS =0V VSD Diode Forward Voltage b V www..com Gate Charge Characteristics Qg Total Gate Charge Q gs Q gd Gate-Drain Charge 9.5 VDS =15V, VGS =4.5V, IDS=7A 2.3 4.2 2 www.anpec.com.tw Gate-Source Charge nC Copyright (c) ANPEC Electronics Corp. Rev. B.1 - Apr., 2006 APM4906K Electrical Characteristics (Cont.) (TA = 25C unless otherwise noted) Symbol Parameter b Test Condition APM4906K Min. Typ. Max. Unit Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf Notes: VGS=0V,VDS=0V,F=1MHz VGS=0V, Ch1 VDS=15V, Frequency=1.0MHz Ch2 2 880 130 160 90 10 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time a : Pulse test ; pulse width300s, duty cycle2%. b : Guaranteed by design, not subject to production testing. pF VDD=15V, RL=15, IDS=1A, VGEN=10V, RG=6 18 30 8 ns www..com Copyright (c) ANPEC Electronics Corp. Rev. B.1 - Apr., 2006 3 www.anpec.com.tw APM4906K Typical Characteristics Power Dissipation 2.5 8 Drain Current 2.0 1.5 ID - Drain Current (A) 6 Ptot - Power (W) 4 1.0 2 0.5 TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160 o 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 o 0 Tj - Junction Temperature (C) Tj - Junction Temperature (C) Safe Operation Area Normalized Transient Thermal Resistance 100 2 1 Thermal Transient Impedance Duty = 0.5 0.2 0.1 ID - Drain Current (A) Rd s(o n) Lim it 10 300s 1ms 10ms 100ms 1s DC 0.1 0.05 0.02 0.01 1 0.01 Single Pulse 0.1 T =25 www..com C 0.01 A 0.01 0.1 o 1 10 100 1E-3 1E-4 Mounted on 1in pad o RJA : 62.5 C/W 2 1E-3 0.01 0.1 1 10 30 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright (c) ANPEC Electronics Corp. Rev. B.1 - Apr., 2006 4 www.anpec.com.tw APM4906K Typical Characteristics (Cont.) Output Characteristics 30 VGS=4,5,6,7,8,9,10V 40 Drain-Source On Resistance RDS(ON) - On - Resistance (m) 25 35 ID - Drain Current (A) 20 3V 30 VGS=4.5V 25 VGS=10V 20 15 10 2.5V 5 2V 0 0.0 15 10 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Drain-Source On Resistance 50 ID=7A 1.4 Gate Threshold Voltage IDS=250A RDS(ON) - On - Resistance (m) Normalized Threshold Voltage 45 40 35 30 25 20 1.2 1.0 0.8 0.6 www..com 15 1 2 3 4 5 6 7 8 9 10 0.4 -50 -25 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C) Copyright (c) ANPEC Electronics Corp. Rev. B.1 - Apr., 2006 5 www.anpec.com.tw APM4906K Typical Characteristics (Cont.) Drain-Source On Resistance 1.8 VGS =10V 1.6 IDS =7A Gate Charge 10 VDS=15V IDS= 7A Normalized On Resistance VGS - Gate - source Voltage (V) RON@Tj=25 C: 22m o 8 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 6 4 2 0 25 50 75 100 125 150 0 0 4 8 12 16 20 24 Tj - Junction Temperature (C) Channel 1 Source-Drain Diode Forward 30 QG - Gate Charge (nC) Capacitance 1400 1200 Frequency=1MHz IS - Source Current (A) 10 C - Capacitance (pF) Tj=150 C o 1000 Ciss 800 600 400 200 Tj=25 C o Coss Crss www..com 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 0 5 10 15 20 25 30 VSD - Source - Drain Voltage (V) VDS - Drain - Source Voltage (V) Copyright (c) ANPEC Electronics Corp. Rev. B.1 - Apr., 2006 6 www.anpec.com.tw APM4906K Typical Characteristics (Cont.) Channel 2 Source-Drain Diode Forward 30 1400 1200 Capacitance Frequency=1MHz 10 IS - Source Current (A) C - Capacitance (pF) 1000 Ciss 800 600 400 200 Crss Tj=150 C o 1 Tj=25 C o Coss 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0 5 10 15 20 25 30 VSD - Source - Drain Voltage (V) VDS - Drain - Source Voltage (V) www..com Copyright (c) ANPEC Electronics Corp. Rev. B.1 - Apr., 2006 7 www.anpec.com.tw APM4906K Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 www..com 1 Millimeters Min. 1.35 0.10 4.80 3.80 5.80 0.40 0.33 1.27BSC 8 Max. 1.75 0.25 5.00 4.00 6.20 1.27 0.51 Min. 0.053 0.004 0.189 0.150 0.228 0.016 0.013 0.015X45 Inches Max. 0.069 0.010 0.197 0.157 0.244 0.050 0.020 0.50BSC 8 Copyright (c) ANPEC Electronics Corp. Rev. B.1 - Apr., 2006 8 www.anpec.com.tw APM4906K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp Critical Zone T L to T P Ramp-up Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 25 C to Peak Tim e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) www..com Peak/Classificatioon Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds 6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. 9 www.anpec.com.tw Copyright (c) ANPEC Electronics Corp. Rev. B.1 - Apr., 2006 APM4906K Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process - Package Peak Reflow Temperatures 3 3 Package Thickness Volum e m m Volume mm <350 350 <2.5 m m 240 +0/-5C 225 +0/-5C 2.5 m m 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Temperatures 3 3 3 Package Thickness Volume mm Volume mm Volume mm <350 350-2000 >2000 <1.6 m m 260 +0C* 260 +0C* 260 +0C* 1.6 m m - 2.5 m m 260 +0C* 250 +0C* 245 +0C* 2.5 m m 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo www..com Ao D1 Ko Copyright (c) ANPEC Electronics Corp. Rev. B.1 - Apr., 2006 10 www.anpec.com.tw APM4906K Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 3301 F 5.5 0.1 B 62 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 P1 2.0 0.1 T2 2 0.2 Ao 6.4 0.1 W 12 + 0.3 - 0.1 Bo 5.2 0.1 P 8 0.1 E 1.75 0.1 SOP-8 D D1 Po 1.550.1 1.55+ 0.25 4.0 0.1 Ko t 2.1 0.1 0.30.013 (mm) Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. www..com Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright (c) ANPEC Electronics Corp. Rev. B.1 - Apr., 2006 11 www.anpec.com.tw |
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